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| IRF40N03 N-CHANNEL Power MOSFET APPLICATION Fast Switching Simple Drive Requirement Low Gate Charge VDSS 30V RDS(ON) Max. ..17.0m ID 40A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current Continuous Tc = 25 , VGS@10V Continuous Tc = 100 , VGS@10V Pulsed Tc = 25 , VGS@10V (Note 2) Gate-to-Source Voltage Total Power Dissipation Derating Factor above 25 Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144H,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Continue Symbol VDSS ID ID IDM VGS PD Value 30 40 30 170 20 .50 0.4 4.5 -55 to 175 500 300 260 60 A mJ V W W/ V/ns Unit V A THERMAL RESISTANCE Symbol R R JC Parameter Junction-to-case Junction-to-ambient Min Typ Max 2.5 62 Units JA /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175 1 cubic foot chamber, free air www.magic-matsu.com Page 1 IRF40N03 N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package ....................IRF40N03..............................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . cIRF40N03 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Breakdown Voltage Temperature Coefficient (Reference to 25 VDSS/ TJ IDSS ) ) IGSS IGSS ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 20A) Forward Transconductance (VDS = 10 V, ID = 20A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge (IS = 40 A, VGS = 0 V) (IF = 40A, VGS = 0 V, di/dt = 100A/s) Integral pn-diode in MOSFET ISM VSD trr Qrr ........................ Symbol Min Typ Max Units VDSS 30 0.037 ...V V/ A 1 25 100 -100 nA nA , ID = 1mA) Drain-to-Source Leakage Current (VDS = 30 V, VGS = 0 V, TJ = 25 (VDS = 24 V, VGS = 0 V, TJ = 150 Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) VGS(th) (Note 4) (Note 4) Dynamic Characteristics (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDS = 24 V, ID = 20 A, VGS = 5 V) (Note 5) Ciss Coss Crss Qg Qgs Qgd Resistive Switching Characteristics (VDS = 15 V, ID = 20 A, VGS = 10 V, RG = 3.3 ) (Note 5) td(on) trise td(off) tfall IS RDS(on) 1.0 2.0 3.0 V m 14 gFS 26 ................800 380 ...............133 17 3 ..................10 7.2 60 22.5 10 17 S . pF pF pF nC nC nC ns ns ... ... ... .. ns .................. ns 40 170 1.3 A A V ns nC Source-Drain Diode Characteristics 55 110 Note 1: TJ = +25 to 150 Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 12.0A, di/dt 100A/s, VDD BVDSS, TJ = +150 Note 4: Pulse width 250s; duty cycle 2% Note 5: Essentially independent of operating temerpature. www.magic-matsu.com Page 2 IRF40N03 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 40 35 V G S =10,9,8,7,6,5V 40 25 C 30 ID, Drain C urrent (A) 30 25 20 15 10 5 V G S =4V ID, Drain C urrent (A) T j=125 C 20 10 -55 C 0 0 1 2 3 4 5 6 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 3600 F igure 2. Trans fer C haracteris tics 1.3 R DS (ON), Normalized Drain-S ource, On-R es is tance V G S =10V 1.2 T j=125 C 1.1 1.0 0.9 0.8 0.7 25 C -55 C 3000 C , C apacitance (pF ) 2400 1800 C is s 1200 600 0 0 5 10 15 20 25 30 C os s C rs s 6 0 10 20 30 40 V DS , Drain-to S ource Voltage (V ) ID, Drain C urrent(A) B V DS S , Normalized Drain-S ource B reakdown V oltage F igure 3. C apacitance V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250uA 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 V DS =10V F igure 6. B reakdown V oltage V ariation with T emperature 40 gFS , T rans conductance (S ) 50 Is , S ource-drain current (A) 0 5 10 15 20 40 30 20 10 0 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) F igure 7. T rans conductance V ariation with Drain C urrent V S D, B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent www.magic-matsu.com Page 3 IRF40N03 POWER MOSFET V G S , G ate to S ource V oltage (V ) 10 ID, Drain C urrent (A) 8 6 4 2 0 0 VDS =10V ID=40A 300 200 100 1m 10 RD S (O N) L im it 10 10 DC s ms 0m 1s s 6 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 5 10 15 20 25 30 35 40 1 10 30 60 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge V DD F igure 10. Maximum S afe O perating Area ton toff tr 90% V IN D VG S R GE N G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve www.magic-matsu.com Page 4 |
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